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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1673 DESCRIPTION *With TO-3PML package *Complement to type 2SC4388 APPLICATIONS *Audio and general purpose PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Fig.1 simplified outline (TO-3PML) and symbol * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collectorl power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -180 -180 -6 -15 -4 85 150 -55~150 UNIT V V V A A W PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-5 A;IB=-0.5 A B 2SA1673 MIN -180 TYP. MAX UNIT V -2.0 -10 -10 50 20 500 180 V A A VCB=-180V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IC=-0.5A ; VCE=-12V IE=0; VCB=-10V;f=1MHz MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=-10A;RL=4 IB1=-IB2=-1A VCC=-40V 0.60 0.90 0.20 s s s hFE classifications O 50-100 P 70-140 Y 90-180 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1673 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1673 4 |
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